CBCX69-16. Аналоги и основные параметры
Наименование производителя: CBCX69-16
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 65 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT89
Аналоги (замена) для CBCX69-16
- подборⓘ биполярного транзистора по параметрам
CBCX69-16 даташит
cbcx69-16.pdf
CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI
cbcx69-25.pdf
CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI
cbcx68 cbcx69.pdf
CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI
cbcx68-25.pdf
CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI
Другие транзисторы: BTD1805D3, C2611, C3150, C3875S, C5344, CA783, CBCX68-16, CBCX68-25, 2SC2655, CBCX69-25, CD066, CD77-2, CE1N2R, CE2F3P, CEN-U01A, CEN-U05, CEN-U06
History: PN2712 | 2SC645 | S1429-3
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Список транзисторов
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