Биполярный транзистор CMBTA93 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CMBTA93
Маркировка: 2E
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT-23
CMBTA93 Datasheet (PDF)
cmbta93.pdf
www.datasheet4u.comContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA92CMBTA93SILICON EPITAXIAL TRANSISTORSPNP transistorMarkingPACKAGE OUTLINE DETAILSCMBTA92 = 2D ALL DIMENSIONS IN mmCMBTA93 = 2EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A92 A
cmbta92 93.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA92CMBTA93SILICON EPITAXIAL TRANSISTORSPNP transistorMarkingPACKAGE OUTLINE DETAILSCMBTA92 = 2D ALL DIMENSIONS IN mmCMBTA93 = 2EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A92 A93Collectorbase
cmbta13.pdf
CMBTA13NPN Small-Signal Darlington Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-emmitter voltage (open base)VCES max 30 VVBE = 0ICmax 300 mACollector current (d.c.)Total power dissipation up toPtotmax 250 mWTamb = 25oCoTj max 150Junction Temperature CD.C. curren
cmbta05 06.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA05CMBTA06SILICON EPITAXIAL TRANSISTORSNPN transistorMarkingPACKAGE OUTLINE DETAILSCMBTA05 = 1HALL DIMENSIONS IN mmCMBTA06 = 1GPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A05 A06Collectorbase
cmbta13 14.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA13CMBTA14NPN SMALLSIGNAL DARLINGTON TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBTA13 = 1M ALL DIMENSIONS IN mmCMBTA14 = 1NPin configuration1 = BASE2 = EMITTER3 = COLLECTORABSOLUTE MAXIMUM RATINGSCollectoremitter v
cmbta44.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312Marking Code is =3ZDesigned for Extremely High Voltage ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Base
cmbta42 43.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA42CMBTA43SILICON EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBTA42 = 1DALL DIMENSIONS IN mmCMBTA43 = 1EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A42 A43Collectorbas
cmbta55 56.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA55CMBTA56SILICON EPITAXIAL TRANSISTORSPNP transistorPACKAGE OUTLINE DETAILSMarkingALL DIMENSIONS IN mmCMBTA55 = 2HCMBTA56 = 2GPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A55 A56Collectorbase
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050