Биполярный транзистор CMLT3820 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CMLT3820
Маркировка: 38G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-563
CMLT3820 Datasheet (PDF)
cmlt3820.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT SILICONVERY LOW VCE(SAT)DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving SOT-563 surface mount package, this component provides performance characteristics suitable for
cmlt3820g.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT VERY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN SILICON TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving PICOmini SOT-563 surface mount package, this component provides performance characteristics
cmlt3946e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3904e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3906e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3474.pdf
CMLT3410 NPNCMLT7410 PNP CMLT3474 NPN/PNPwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL, LOW VCE(SAT)These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage.MARKIN
cmlt3410.pdf
CMLT3410 NPNCMLT7410 PNP CMLT3474 NPN/PNPwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL, LOW VCE(SAT)These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage.MARKIN
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
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