Биполярный транзистор CMLT3946E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CMLT3946E
Маркировка: L46
Тип материала: Si
Полярность: NPN*PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-563
Аналоги (замена) для CMLT3946E
CMLT3946E Datasheet (PDF)
cmlt3946e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3904e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3906e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3820g.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT VERY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN SILICON TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving PICOmini SOT-563 surface mount package, this component provides performance characteristics
cmlt3820.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT SILICONVERY LOW VCE(SAT)DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving SOT-563 surface mount package, this component provides performance characteristics suitable for
cmlt3474.pdf
CMLT3410 NPNCMLT7410 PNP CMLT3474 NPN/PNPwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL, LOW VCE(SAT)These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage.MARKIN
cmlt3410.pdf
CMLT3410 NPNCMLT7410 PNP CMLT3474 NPN/PNPwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL, LOW VCE(SAT)These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage.MARKIN
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050