Справочник транзисторов. CMLT591E

 

Биполярный транзистор CMLT591E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CMLT591E
   Маркировка: L59
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 10 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT-563

 Аналоги (замена) для CMLT591E

 

 

CMLT591E Datasheet (PDF)

 ..1. Size:449K  central
cmlt591e.pdf

CMLT591E
CMLT591E

CMLT591Ewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT591E is a PNP Low VCE(SAT) 1.0 Amp transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for applications requiring a high current capability and low saturation voltages.MARKING CODE: L59SOT-563 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNI

 9.1. Size:519K  central
cmlt5078e cmlt5087e cmlt5088e series.pdf

CMLT591E
CMLT591E

CMLT5078E NPN/PNPCMLT5087E PNP/PNPCMLT5088E NPN/NPNwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNTThe CENTRAL SEMICONDUCTOR CMLT5078E, SILICON DUAL TRANSISTORSCMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODE &

 9.2. Size:458K  central
cmlt5088e.pdf

CMLT591E
CMLT591E

CMLT5078E NPN/PNPCMLT5087E PNP/PNPCMLT5088E NPN/NPNwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThe CENTRAL SEMICONDUCTOR CMLT5078E, DUAL TRANSISTORSCMLT5087E, and CMLT5088E are surface mount silicon transistors with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMLT5078E: L78CMLT5087E:

 9.3. Size:458K  central
cmlt5078e.pdf

CMLT591E
CMLT591E

CMLT5078E NPN/PNPCMLT5087E PNP/PNPCMLT5088E NPN/NPNwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThe CENTRAL SEMICONDUCTOR CMLT5078E, DUAL TRANSISTORSCMLT5087E, and CMLT5088E are surface mount silicon transistors with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMLT5078E: L78CMLT5087E:

 9.4. Size:448K  central
cmlt5551hc.pdf

CMLT591E
CMLT591E

CMLT5551HCwww.centralsemi.comSURFACE MOUNT SILICONHIGH CURRENTDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT5551HC is a high current NPN silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage and high current amplifier applications. MARKING CODE: C51S

 9.5. Size:624K  central
cmlt5088em.pdf

CMLT591E
CMLT591E

CMLT5088EMwww.centralsemi.comSURFACE MOUNT SILICONDUAL, MATCHEDDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE(ON) characteristics.This device is designed for applications requiring high gain and low noise.MARKING CODE: 88MFEATURES:SOT-563 CASE Transistor pair matche

 9.6. Size:517K  central
cmlt5551.pdf

CMLT591E
CMLT591E

CMLT5551www.centralsemi.comSURFACE MOUNT SILICONDUAL, HIGH VOLTAGEDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage amplifier applications.MARKING CODE: 5C5

 9.7. Size:693K  central
cmlt5087em.pdf

CMLT591E
CMLT591E

CMLT5087EMwww.centralsemi.comSURFACE MOUNT SILICONDUAL, MATCHEDDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE(ON) characteristics.This device is designed for applications requiring high gain and low noise.MARKING CODE: 87MFEATURES:SOT-563 CASE Transistor pair matche

 9.8. Size:518K  central
cmlt5554.pdf

CMLT591E
CMLT591E

CMLT5554www.centralsemi.comSURFACE MOUNT SILICONDUAL, COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMLT5554 HIGH VOLTAGE TRANSISTORconsists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for

 9.9. Size:458K  central
cmlt5087e.pdf

CMLT591E
CMLT591E

CMLT5078E NPN/PNPCMLT5087E PNP/PNPCMLT5088E NPN/NPNwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThe CENTRAL SEMICONDUCTOR CMLT5078E, DUAL TRANSISTORSCMLT5087E, and CMLT5088E are surface mount silicon transistors with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMLT5078E: L78CMLT5087E:

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top