Справочник транзисторов. D44VH10G

 

Биполярный транзистор D44VH10G Даташит. Аналоги


   Наименование производителя: D44VH10G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 83 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 120 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO-220
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D44VH10G Datasheet (PDF)

 ..1. Size:70K  onsemi
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D44VH10G

D44VH10 (NPN),D45VH10 (PNP)Complementary SiliconPower TransistorsThese complementary silicon power transistors are designed forhigh-speed switching applications, such as switching regulators andhigh frequency inverters. The devices are also well-suited for driversfor high power switching circuits.15 AFeaturesCOMPLEMENTARY SILICON Fast Switching -POWER TRANSISTORS t

 7.1. Size:98K  onsemi
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D44VH10G

D44VH10 (NPN),D45VH10 (PNP)Complementary SiliconPower TransistorsThese complementary silicon power transistors are designed forhigh-speed switching applications, such as switching regulators andwww.onsemi.comhigh frequency inverters. The devices are also well-suited for driversfor high power switching circuits.15 ACOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Fast

 7.2. Size:213K  inchange semiconductor
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D44VH10G

isc Silicon NPN Power Transistor D44VH10DESCRIPTIONDC Current Gain-: h = 35(Min)@I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSY

 9.1. Size:92K  motorola
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D44VH10G

Order this documentMOTOROLAby D44VH/DSEMICONDUCTOR TECHNICAL DATANPND44VHComplementary Silicon PowerPNPD45VHTransistorsThese complementary silicon power transistors are designed for highspeedswitching applications, such as switching regulators and high frequency inverters.The devices are also wellsuited for drivers for high power switching circuits.15 AMPERE

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History: BUX40A | BFG520-X | S9013-J | 3DA50E | BST62 | 40940

 

 
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