Биполярный транзистор D965ASS
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: D965ASS
Маркировка: D65A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.75
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 50
pf
Статический коэффициент передачи тока (hfe): 230
Корпус транзистора:
SOT-23
Аналоги (замена) для D965ASS
D965ASS
Datasheet (PDF)
..1. Size:189K utc
d965ass.pdf 
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
8.1. Size:767K pjsemi
2sd965asq-q 2sd965asq-r 2sd965asq-s.pdf 
2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current1. Base 2. Collector 3.EmitterMarking: Q: AQR:ARS:ASAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBOCollector Emitter Voltage V 30 V CEOUnitEm
9.1. Size:229K utc
2sd965 2sd965a.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi
9.2. Size:101K secos
2sd965a.pdf 
2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 23A Switching circuit ECB C E B DCLASSIFICATION OF hFE(2) Rank Q R SF G230 - 380 Range 340 - 600 560 - 800 H KJ LMilli
9.3. Size:335K jiangsu
2sd965a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING: 965AMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 VCollector-
9.4. Size:555K htsemi
2sd965a.pdf 
2SD 965ATRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V3Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 VIC Collector Current -Continuous 5 AC
9.5. Size:206K lge
2sd965a.pdf 
2SD965A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 32.64.252.43.75Features 0.8 Audio amplifier MIN0.530.400.480.44 Flash unit of camera 2x)0.13 B0.35 0.371.5 Switching circuit 3.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter
9.6. Size:250K shenzhen
2sd965a.pdf 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 40 VCollector-Emitter V
9.7. Size:236K cystek
btd965a3.pdf 
Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20VIC 5ABTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package
9.8. Size:321K kexin
2sd965a.pdf 
SMD Type TransistorsNPN Transistors2SD965A1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C
9.9. Size:451K feihonltd
d965a.pdf 
MAIN CHARACTERISTICS FEATURES IC 5A Epitaxial silicon VCEO 20V High switching speed PC 750mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform
9.10. Size:3220K slkor
2sd965a-q 2sd965a-r 2sd965a-s.pdf 
2SD965ANPN Transistors3 Features2 Low saturation voltage1.Base1 Large Collector Power Dissipation and Current2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin
9.11. Size:386K powersilicon
2sd965 2sd965a.pdf 
DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20~30 V CURRENT 5 A FEATURES TO-92SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE ECMECHANICAL DATA E C B B CASE: SOT-89, TO-92 SOLDERABILITY: MIL-STD-202,
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