Биполярный транзистор CHT5564XGP
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: CHT5564XGP
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 6
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 380
MHz
Ёмкость коллекторного перехода (Cc): 23
pf
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора:
SOT-89
Аналоги (замена) для CHT5564XGP
CHT5564XGP
Datasheet (PDF)
..1. Size:72K chenmko
cht5564xgp.pdf CHENMKO ENTERPRISE CO.,LTDCHT5564XGPSURFACE MOUNT NPN Epitaxial Transistor VOLTAGE 15 Volts CURRENT 6 AmperesAPPLICATION* DC to DC relay drivers,lamp driversFEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.18V(IC/IB=1.5A/0.03A) * PC= 1.3W (mounted on ceramic substrate).* High saturation current capability.4.6MAX. 1.6MAX.1.7MA
9.1. Size:102K chenmko
cht5551wgp.pdf CHENMKO ENTERPRISE CO.,LTDCHT5551WGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* Suitable for high packing density.CONSTRUCTION0.651.30.12.00.20.65* NPN transistors in one package.0.30.11.250.1
9.2. Size:150K chenmko
cht5551gp.pdf CHENMKO ENTERPRISE CO.,LTDCHT5551GPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small flat package. ( SOT-23 )* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN SILICON Transistor(2)CONSTRUCTIONFT( ) ( ).055 1.40
9.3. Size:135K chenmko
cht5551zgp.pdf CHENMKO ENTERPRISE CO.,LTDCHT5551ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SIL
9.4. Size:145K chenmko
cht5551sgp.pdf CHENMKO ENTERPRISE CO.,LTDCHT5551SGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. ( SC-88/SOT-363 )* Suitable for high packing density.(1) (6)CONSTRUCTION0.651.2~1.4 2.0~2.2*NPN SILICON Transistor0.65
9.5. Size:121K chenmko
cht5551xgp.pdf CHENMKO ENTERPRISE CO.,LTDCHT5551XGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-62/SOT-89FEATURE* Suitable for high packing density.4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05CONSTRUCTION*NPN SILICON Transistor+0.080.45-0.05+0.08 +0.080.40-0.05 0.
9.6. Size:62K chenmko
cht55gp.pdf CHENMKO ENTERPRISE CO.,LTDCHT55GPSURFACE MOUNT PNP General Purpose Transistor -VOLTAGE 60 Volts CURRENT 0.5 AmpereAPPLICATION* General purpose applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* Low current (Max.=500mA). * Suitable for high packing density.* Low voltage (Max.=60V) .(1)* High saturation current capability.(3)(2)CONSTRUCTION( ) (
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.