Биполярный транзистор DMC501E0 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DMC501E0
Маркировка: C7
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1900 MHz
Ёмкость коллекторного перехода (Cc): 1.2 pf
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: SMINI5-F3-B
DMC501E0 Datasheet (PDF)
dmc501e0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC501E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC201E0 in SMini5 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1: Base
dmc50101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC50101Silicon NPN epitaxial planar typeFor general amplificationDMC20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction
dmc50601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC50601Silicon NPN epitaxial planar typeFor general amplificationDMC20601 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction
dmc50501.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC50501Silicon NPN epitaxial planar typeFor general amplificationDMC20501 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction
dmc50201.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC50201Silicon NPN epitaxial planar typeFor general amplificationDMC20201 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction
dmc505c0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC505C0Silicon NPN epitaxial planar typeFor low frequency amplificationDMC205C0 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, redu
dmc505e0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC505E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC205E0 in SMini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks
dmc505e2.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC505E2Silicon NPN epitaxial planar typeFor high frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here. Click! Basic Par
dmc50401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC50401Silicon NPN epitaxial planar typeFor general amplificationDMC20401 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
dmc506e2.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC506E2Silicon NPN epitaxial planar typeFor high-frequency amplificationDMC206E2 in SMini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050