Биполярный транзистор DMG20102 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DMG20102
Маркировка: CY
Тип материала: Si
Полярность: NPN*PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 160 MHz
Ёмкость коллекторного перехода (Cc): 4.8 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-753
DMG20102 Datasheet (PDF)
dmg20102.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG20102Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dmg204b0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG204B0Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free
dmg20402.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG20402Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of se
dmg204a0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG204A0Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free
dmg20401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG20401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Package Features Code High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Pin Name Contributes to miniatur
dmg204b1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG204B1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050