EMT1DXV6T1G. Аналоги и основные параметры

Наименование производителя: EMT1DXV6T1G

Маркировка: 3T

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.357 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 140 MHz

Ёмкость коллекторного перехода (Cc): 3.5 pf

Статический коэффициент передачи тока (hFE): 120

Корпус транзистора: SOT-563

 Аналоги (замена) для EMT1DXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

EMT1DXV6T1G даташит

 ..1. Size:49K  onsemi
emt1dxv6t1g.pdfpdf_icon

EMT1DXV6T1G

EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS

 4.1. Size:51K  onsemi
emt1dxv6t1 5.pdfpdf_icon

EMT1DXV6T1G

EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS

 5.1. Size:49K  onsemi
emt1dxv6t5g.pdfpdf_icon

EMT1DXV6T1G

EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS

 6.1. Size:176K  onsemi
emt1dxv6.pdfpdf_icon

EMT1DXV6T1G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Другие транзисторы: DXTN26070CY, E13005-225, E13005-250, E13005D-213, ECH8502-TL-H, ECH8503-TL-H, EML22, EMT18, BC546, EMT1DXV6T5G, EMT1FHA, EMT2, EMT2FHA, EMT3, EMT3FHA, L2SA1577QT1G, L2SA1577RT1G