Биполярный транзистор L2SC5343SLT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: L2SC5343SLT1G
Маркировка: 7S
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 270
Корпус транзистора: SOT-23
Аналоги (замена) для L2SC5343SLT1G
L2SC5343SLT1G Datasheet (PDF)
l2sc5343slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC5343QLT1GNPN Silicon SeriesS-L2SC5343QLT1GFEATURE Excellent hFE linearity Series:hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise:NF=1Db(Typ).at f=1KHz. 12 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli
l2sc5343qlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesS-L2SC5343QLT1GNPN SiliconFEATURE Series Excellent hFE linearity 3:hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements.SOT 23 S- Prefix for Automotive a
l2sc5343rlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesNPN SiliconS-L2SC5343QLT1GFEATURE SeriesExcellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic
l2sc5658qm3t5g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h
l2sc5635lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;
l2sc5635wt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC
l2sc5658rm3t5g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h
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Список транзисторов
Обновления
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