Справочник транзисторов. M8050S

 

Биполярный транзистор M8050S - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: M8050S
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: TO-92

 Аналоги (замена) для M8050S

 

 

M8050S Datasheet (PDF)

 ..1. Size:512K  jiangsu
m8050s.pdf

M8050S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050S TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. COLLECTOR3. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

 9.1. Size:271K  mcc
m8050-d.pdf

M8050S
M8050S

MCCMicro Commercial ComponentsTMM8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an

 9.2. Size:271K  mcc
m8050-c.pdf

M8050S
M8050S

MCCMicro Commercial ComponentsTMM8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an

 9.3. Size:365K  secos
m8050.pdf

M8050S
M8050S

M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A Power dissipation L33Top View C BMARKING 11 2Product Marking Code2K EM8050 Y11DH JF GPACKAGE INFORMATION Millimeter MillimeterPackage MPQ Leader Size REF. REF. Min.

 9.4. Size:1378K  jiangsu
m8050.pdf

M8050S
M8050S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050 TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. BASE 3. COLLECTOR Equivalent Circuit M8050M8050=Device code Solid dot = Green molding compound device, Z if none, the normal device Z=Range of hFEXXX=Code 11ORDERING INFORMATION Pa

 9.5. Size:479K  htsemi
m8050.pdf

M8050S
M8050S

M8050TRANSISTOR(NPN)SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 APC Collector Power Dissipation 0.2 W Tj Junction

 9.6. Size:292K  gsme
m8050.pdf

M8050S
M8050S

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

 9.7. Size:234K  lge
m8050 sot-23.pdf

M8050S
M8050S

M8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 APC

 9.8. Size:200K  lge
m8050 to-92.pdf

M8050S
M8050S

M8050(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions i

 9.9. Size:325K  wietron
m8050lt1.pdf

M8050S
M8050S

M8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.0 8003002.44170.125100 40 5.01000.15u35u4.0 0.15WEITRON1/4 15-Jul-10http://www.weitron.com.twM8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMMinON CHARACTERISTICSDC Current Gain-

 9.10. Size:210K  globaltech semi
gstm8050lt1.pdf

M8050S
M8050S

GSTM8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 800mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTM8050LT1F SOT-23 P 80P

 9.11. Size:2180K  born
m8050.pdf

M8050S
M8050S

M8050Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesComplimentary to M8550 Collector Current: IC=0.8A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter ValueSymbol Units1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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