Биполярный транзистор PBSS4021PZ - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4021PZ
Маркировка: PB4021PZ
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 6.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 85 MHz
Ёмкость коллекторного перехода (Cc): 125 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-223
Аналоги (замена) для PBSS4021PZ
PBSS4021PZ Datasheet (PDF)
pbss4021pz.pdf
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PBSS4021PZ20 V, 6.6 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V
pbss4021pz.pdf
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PBSS4021PZ20 V, 6.6 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V
pbss4021px.pdf
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PBSS4021PX20 V, 6.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NX.1.2 Features and benefits Very low collector-emitter saturati
pbss4021pt.pdf
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PBSS4021PT20 V, 3.5 A PNP low VCEsat (BISS) transistorRev. 01 29 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col
pbss4021px.pdf
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PBSS4021PX20 V, 6.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NX.1.2 Features and benefits Very low collector-emitter saturati
pbss4021pt.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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