Биполярный транзистор PBSS4021SP
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4021SP
Маркировка: 4021SP
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.7
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 6.3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 105
MHz
Ёмкость коллекторного перехода (Cc): 95
pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
SO-8
Аналоги (замена) для PBSS4021SP
PBSS4021SP
Datasheet (PDF)
..1. Size:375K philips
pbss4021sp.pdf PBSS4021SP20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name
..2. Size:375K nxp
pbss4021sp.pdf PBSS4021SP20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name
0.1. Size:214K philips
pbss4021spn.pdf PBSS4021SPN20 V NPN/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS
0.2. Size:214K nxp
pbss4021spn.pdf PBSS4021SPN20 V NPN/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS
5.1. Size:166K philips
pbss4021sn.pdf PBSS4021SN20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name
5.2. Size:166K nxp
pbss4021sn.pdf PBSS4021SN20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name
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