Справочник транзисторов. WBR13003B2D

 

Биполярный транзистор WBR13003B2D - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: WBR13003B2D
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO-126

 Аналоги (замена) для WBR13003B2D

 

 

WBR13003B2D Datasheet (PDF)

 ..1. Size:317K  winsemi
wbr13003b2d.pdf

WBR13003B2D
WBR13003B2D

WBR13003B2DWBR13003B2DWBR13003B2DWBR13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

 4.1. Size:336K  winsemi
wbr13003b2.pdf

WBR13003B2D
WBR13003B2D

WBR13003B2WBR13003B2WBR13003B2WBR13003B2High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Par

 5.1. Size:313K  winsemi
wbr13003b3.pdf

WBR13003B2D
WBR13003B2D

WBR13003B3WBR13003B3WBR13003B3WBR13003B3High Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for

 5.2. Size:316K  winsemi
wbr13003b.pdf

WBR13003B2D
WBR13003B2D

WBR13003BWBR13003BWBR13003BWBR13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switchingmode power supply.Absolute Maximum RatingsSymbol Parameter Tes

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