MJ16018-1400V datasheet и подбор замены

 ..1. Size:113K  savantic
 mj16018-1400v.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ16018 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector

 7.1. Size:366K  motorola
 mj16018r.pdf 

Order this document MOTOROLA by MJ16018/D SEMICONDUCTOR TECHNICAL DATA * MJ16018 * MJW16018 Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1.5 kV SWITCHMODE Series 10 AMPERES These transistors are designed for high voltage, high speed, power switching in 800 VOLTS inductive circuits where fall time is critical. They are par

 7.2. Size:207K  inchange semiconductor
 mj16018.pdf 

isc Silicon NPN Power Transistor MJ16018 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.1. Size:548K  motorola
 mj16010r.pdf 

Order this document MOTOROLA by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series MJ16012* NPN Silicon Power Transistors These transistors are designed for high voltage, high speed, power switching in MJW16012* inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications

 8.2. Size:82K  jmnic
 mj16010.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute

 8.3. Size:206K  inchange semiconductor
 mj16012.pdf 

isc Silicon NPN Power Transistor MJ16012 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate

 8.4. Size:206K  inchange semiconductor
 mj16010.pdf 

isc Silicon NPN Power Transistor MJ16010 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate

 8.5. Size:211K  inchange semiconductor
 mj16016.pdf 

isc Silicon NPN Power Transistor MJ16016 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.6. Size:206K  inchange semiconductor
 mj16014.pdf 

isc Silicon NPN Power Transistor MJ16014 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line