MJ21194G - параметры, поиск аналогов, даташиты транзистора

MJ21194G Datasheet (PDF)

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MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY

7.1. Size:122K onsemi
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MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin

7.2. Size:167K cn sptech
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SPTECH Product SpecificationSilicon NPN Power Transistor MJ21194DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4 V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21193APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSOLUT

7.3. Size:201K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .