Справочник транзисторов. MJB44H11G

 

Биполярный транзистор MJB44H11G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJB44H11G
   Маркировка: B44H11G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 130 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO-263

 Аналоги (замена) для MJB44H11G

 

 

MJB44H11G Datasheet (PDF)

 ..1. Size:152K  onsemi
 mjb44h11g.pdf

MJB44H11G MJB44H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.1. Size:406K  st
 mjb44h11t4-a.pdf

MJB44H11G MJB44H11G

MJB44H11T4-AAutomotive-grade low voltage NPN power transistorDatasheet - production dataFeatures Designed for automotive applications and TABAEC- Q101 qualified Low collector-emitter saturation voltage Fast switching speed3Applications1 Power amplifier2D PAK Switching circuitsDescriptionThis device is an NPN transistor manufactured using new

 6.2. Size:152K  onsemi
 mjb44h11t4-g.pdf

MJB44H11G MJB44H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.3. Size:113K  onsemi
 njvmjb44h11 njvmjb45h11.pdf

MJB44H11G MJB44H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.4. Size:64K  onsemi
 mjb44h11 mjb45h11.pdf

MJB44H11G MJB44H11G

MJB44H11 (NPN),MJB45H11 (PNP)Preferred DevicesComplementaryPower TransistorsD2PAK for Surface Mounthttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages in SILICON POWERapplications such as switching regulators, converters and powerTRANSISTORSamplifiers.10 AMPERES,Features80 VOLTS, 50

 6.5. Size:109K  onsemi
 mjb44h11 njvmjb44h11 mjb45h11 njvmjb45h11.pdf

MJB44H11G MJB44H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

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