MJD112T4G datasheet и подбор замены

 ..1. Size:224K  onsemi
 mjd112t4g.pdf 

MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features

 8.1. Size:306K  motorola
 mjd112 mjd117.pdf 

Order this document MOTOROLA by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD112 Complementary Darlington PNP MJD117* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, converters, and power amplifiers. POWER TRANS

 8.2. Size:84K  st
 mjd112 mjd117.pdf 

 8.3. Size:152K  fairchild semi
 mjd112.pdf 

November 2006 MJD112 tm NPN Silicon Darlington Transistor Features High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Equivalent Circuit C B D-PAK 1 R1 R2 1.Base 2.Collector 3.Emitter E R1 10k R2 0.6k Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VC

 8.4. Size:153K  onsemi
 njvmjd112 njvmjd117.pdf 

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas

 8.5. Size:224K  onsemi
 mjd112rlg.pdf 

MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features

 8.6. Size:224K  onsemi
 mjd112-1g.pdf 

MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features

 8.7. Size:224K  onsemi
 mjd112g.pdf 

MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features

 8.8. Size:84K  cdil
 mjd112 mjd117.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO 100 Collector Base Voltage V VCEO 100 Collector Emitter Voltage V E

 8.9. Size:394K  kec
 mjd112 l.pdf 

SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A I C J FEATURES DIM MILLIMETERS High DC Current Gain. _ A 6.60 + 0.2 _ B 6.10 + 0.2 hFE=1000(Min.), VCE=4V, IC=1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector-Emitter Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 + 0

 8.10. Size:184K  lge
 mjd112.pdf 

MJD112(NPN) TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO 100 V Collector-Base Voltage VCEO 100 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage