Биполярный транзистор MJD117-1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJD117-1G
Маркировка: J117G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-база (Ucb): 100
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 25
MHz
Ёмкость коллекторного перехода (Cc): 200
pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора:
TO-251
Аналоги (замена) для MJD117-1G
MJD117-1G
Datasheet (PDF)
..1. Size:224K onsemi
mjd117-1g.pdf 
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
8.1. Size:306K motorola
mjd112 mjd117.pdf 
Order this documentMOTOROLAby MJD112/DSEMICONDUCTOR TECHNICAL DATANPN*MJD112Complementary DarlingtonPNPMJD117*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, converters, and power amplifiers.POWER TRANS
8.2. Size:84K st
mjd112 mjd117.pdf 
MJD112MJD117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP112 AND1TIP117APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIERTO-252(Suffix
8.3. Size:52K fairchild semi
mjd117.pdf 
MJD117D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1171.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted
8.4. Size:153K onsemi
njvmjd112 njvmjd117.pdf 
MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas
8.5. Size:224K onsemi
mjd117rlg.pdf 
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
8.6. Size:224K onsemi
mjd117t4g.pdf 
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
8.7. Size:224K onsemi
mjd117g.pdf 
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
8.8. Size:84K cdil
mjd112 mjd117.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPNMJD117 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Power and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBO 100Collector Base Voltage VVCEO 100Collector Emitter Voltage VE
8.9. Size:1078K jiangsu
mjd117.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP1172. COLLECTOR2133. EMITTER MJD117=Device code Solid dot=Green moldinn compound device, if none,the normal deviceMJD117XXXX=CodeXXXXMAXIMUM RATINGS
8.10. Size:394K kec
mjd117 l.pdf 
SEMICONDUCTOR MJD117/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.AI C JFEATURESDIM MILLIMETERSHigh DC Current Gain. _A 6.60 + 0.2_B 6.10 + 0.2: hFE=1000(Min.), VCE=-4V, IC=-1A._C 5.0 + 0.2_D 1.10 + 0.2Low Collector-Emitter Saturation Voltage._E 2.70 + 0.2_F 2.30 +
8.11. Size:250K inchange semiconductor
mjd117.pdf 
isc Silicon PNP Darlington Power Transistor MJD117DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low sp
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