Справочник транзисторов. MJD200T4G

 

Биполярный транзистор MJD200T4G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJD200T4G
   Маркировка: J200G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 12.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 65 MHz
   Ёмкость коллекторного перехода (Cc): 80 pf
   Статический коэффициент передачи тока (hfe): 45
   Корпус транзистора: TO-252

 Аналоги (замена) для MJD200T4G

 

 

MJD200T4G Datasheet (PDF)

 ..1. Size:183K  onsemi
mjd200t4g.pdf

MJD200T4G
MJD200T4G

MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.1. Size:236K  motorola
mjd200re mjd210.pdf

MJD200T4G
MJD200T4G

Order this documentMOTOROLAby MJD200/DSEMICONDUCTOR TECHNICAL DATANPNMJD200ComplementaryPNPPlastic Power TransistorsMJD210NPN/PNP Silicon DPAK For Surface MountApplications. . . designed for low voltage, lowpower, highgain audio amplifier applications. SILICONPOWER TRANSISTORS CollectorEmitter Sustaining Voltage 5 AMPERESVCEO(sus) = 25 Vdc (Min) @

 8.2. Size:48K  st
mjd200 mjd210.pdf

MJD200T4G
MJD200T4G

MJD200MJD210COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS1DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistordesigned for low voltage, low power, high gain,DPAKaudio amplifier applications.TO-252Th

 8.3. Size:183K  onsemi
mjd200rlg.pdf

MJD200T4G
MJD200T4G

MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.4. Size:183K  onsemi
mjd200g.pdf

MJD200T4G
MJD200T4G

MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.5. Size:142K  onsemi
njvmjd210 mjd200.pdf

MJD200T4G
MJD200T4G

MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix

 8.6. Size:242K  onsemi
mjd200 mjd210.pdf

MJD200T4G
MJD200T4G

Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For SurfaceMount ApplicationsMJD200 (NPN),MJD210 (PNP)www.onsemi.comDesigned for low voltage, low-power, high-gain audioamplifier applications.SILICONPOWER TRANSISTORSFeatures High DC Current Gain5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves25 VOLTS, 12.5 WATTS(No Suffix)

 8.7. Size:207K  inchange semiconductor
mjd200.pdf

MJD200T4G
MJD200T4G

isc Silicon NPN Power Transistor MJD200DESCRIPTIONDC Current Gain-: h = 70(Min) @ I = 0.5AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJD210Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low power audio amplifier and low-current,high-speed switching a

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top