MJD2955G - Даташиты. Аналоги. Основные параметры
Наименование производителя: MJD2955G
Маркировка: J2955G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO-252
MJD2955G Datasheet (PDF)
mjd2955g.pdf
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea
mjd2955r mjd3055.pdf
Order this document MOTOROLA by MJD2955/D SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 Complementary Power PNP MJD3055 Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straight Lead Version in Plastic S
mjd2955 mjd3055.pdf
MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (Suffix "T4") complementary PNP-NPN pairs. They a
mjd2955.pdf
MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular MJE2955T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2
Другие транзисторы... MJD210G , MJD210RLG , MJD210T4G , MJD243G , MJD243T4G , MJD253-1G , MJD253T4G , MJD2955-1G , 2SC2625 , MJD2955T4G , MJD3055G , MJD3055T4G , MJD31C1G , MJD31CG , MJD31CQ , MJD31CRLG , MJD31CT4-A .
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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