MJD3055T4G - Даташиты. Аналоги. Основные параметры

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea

Order this document MOTOROLA by MJD2955/D SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 Complementary Power PNP MJD3055 Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straight Lead Version in Plastic S

MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (Suffix "T4") complementary PNP-NPN pairs. They a

MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular MJE3055T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2

MCC Micro Commercial Components TM MMJD3055 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation. Transistors Collector-cu

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD3055 TRANSISTOR (NPN) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed 1.BASE Switching Applications 2.COLLECTOR 2 Electrically Simiar to MJE3055 1 3.EMITTER 3 DC Current Gain Specified to10 Amperes Equivalent Circuit MJD3055=Device code Solid d

MJD3055(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. DC current gain specified to10 Amperes TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V