MJD42C1G - Даташиты. Аналоги. Основные параметры

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

Order this document MOTOROLA by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* Complementary Power PNP MJD42C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straigh

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

MJD41C (NPN) MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 6 AMPERES (No Suffix) 100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves ( 1

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD42C TRANSISTOR (PNP) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. 1.BASE Lead Formed for Surface Mount Applications in Plastic 2 2.COLLECTOR Sleeves (No Suffix) 1 3 3.EMITTER Straight Lead Version in Plastic Sleeves ( 1 Su

MJD42C(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) TO-252-2L Lead Formed Version in 16 mm Tape and Reel ( T4 S

MJD42C Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features MJD41C Complement to MJD41C. / Applications Medium power linear switching applications. / Equivalent Circuit /

isc Silicon PNP Power Transistors MJD42C DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type MJD41C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low