Биполярный транзистор MJD44E3T4G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJD44E3T4G
Маркировка: J44E3G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 130 pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO-252
Аналоги (замена) для MJD44E3T4G
MJD44E3T4G Datasheet (PDF)
mjd44e3t4g.pdf
MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain
mjd44e3r.pdf
Order this documentMOTOROLAby MJD44E3/DSEMICONDUCTOR TECHNICAL DATAMJD44E3**Motorola Preferred DeviceDarlington Power TransistorDPAK For Surface Mount Application NPN DARLINGTONSILICON. . . for general purpose power and switching output or driver stages in applicationsPOWER TRANSISTORsuch as switching regulators, converters, and power amplifiers.10 AMPERES80 VOLTS
njvmjd44e3.pdf
MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain
mjd44e3.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN DARLINGTON PLASTIC POWER TRANSISTOR MJD44E3DPAK (TO-252)Plastic PackageFor General Purpose Power and Switching Output or Driver Stages in Applications such asSwitching Regulators, Converters and Power AmplifiersABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO 80Collector Em
mjd44e3.pdf
isc Silicon NPN Darlington Power Transistor MJD44E3DESCRIPTIONHigh DC Current Gain: hFE = 1000(Min)@ IC= 5ALow Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 5AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitching applicationsABSOLUTE MAXIMUM RATING
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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