Справочник транзисторов. MJD44H11-1G

 

Биполярный транзистор MJD44H11-1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJD44H11-1G
   Маркировка: J44H11G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 85 MHz
   Ёмкость коллекторного перехода (Cc): 45 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO-251

 Аналоги (замена) для MJD44H11-1G

 

 

MJD44H11-1G Datasheet (PDF)

 ..1. Size:148K  onsemi
mjd44h11-1g.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.1. Size:192K  motorola
mjd44h11 mjd45h11.pdf

MJD44H11-1G
MJD44H11-1G

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 6.2. Size:569K  st
mjd44h11t4a mjd45h11t4a.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

 6.3. Size:210K  st
mjd44h11t4-a.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

 6.4. Size:395K  st
mjd44h11 mjd45h11.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

 6.5. Size:113K  fairchild semi
mjd44h11.pdf

MJD44H11-1G
MJD44H11-1G

March 2009MJD44H11NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

 6.6. Size:237K  nxp
mjd44h11a.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11A80 V, 8 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD45H11A2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Ele

 6.7. Size:236K  nxp
mjd44h11.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H1180 V, 8 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD45H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

 6.8. Size:148K  onsemi
mjd44h11t5g.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.9. Size:148K  onsemi
mjd44h11g.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.10. Size:148K  onsemi
mjd44h11t4g.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.11. Size:148K  onsemi
mjd44h11rlg.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.12. Size:148K  onsemi
njvmjd44h11 njvmjd45h11.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.13. Size:126K  onsemi
mjd44h11 mjd45h11.pdf

MJD44H11-1G
MJD44H11-1G

MJD44H11 (NPN),MJD45H11 (PNP)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee

 6.14. Size:243K  inchange semiconductor
mjd44h11.pdf

MJD44H11-1G
MJD44H11-1G

isc Silicon NPN Power Transistors MJD44H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type MJD45H11DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitchin

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