MJD44H11T5G - аналоги и даташиты биполярного транзистора

 

MJD44H11T5G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MJD44H11T5G
   Маркировка: J44H11G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 85 MHz
   Ёмкость коллекторного перехода (Cc): 45 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO-252

 Аналоги (замена) для MJD44H11T5G

 

MJD44H11T5G Datasheet (PDF)

 ..1. Size:148K  onsemi
 mjd44h11t5g.pdf pdf_icon

MJD44H11T5G

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 5.1. Size:569K  st
 mjd44h11t4a mjd45h11t4a.pdf pdf_icon

MJD44H11T5G

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche

 5.2. Size:210K  st
 mjd44h11t4-a.pdf pdf_icon

MJD44H11T5G

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche

 5.3. Size:148K  onsemi
 mjd44h11t4g.pdf pdf_icon

MJD44H11T5G

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

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Другие транзисторы... MJD42CRLG , MJD42CT4G , MJD44E3T4G , MJD44H11-1G , MJD44H11G , MJD44H11RLG , MJD44H11T4-A , MJD44H11T4G , S9018 , MJD45H11-1G , MJD45H11G , MJD45H11RLG , MJD45H11T4-A , MJD45H11T4G , MJD47G , MJD47T4G , MJD50G .

History: MMST2907A | RN1965CT | GT703D | PMBT3906MB | NTE251 | BC327BP | 4SDG110K

 

 
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