MJD45H11RLG
- Даташиты. Аналоги. Основные параметры
Наименование производителя: MJD45H11RLG
Маркировка: J45H11G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 90
MHz
Ёмкость коллекторного перехода (Cc): 130
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO-252
Аналоги (замена) для MJD45H11RLG
MJD45H11RLG
Datasheet (PDF)
..1. Size:148K onsemi
mjd45h11rlg.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
6.1. Size:192K motorola
mjd44h11 mjd45h11.pdf 

Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS
6.2. Size:569K st
mjd44h11t4a mjd45h11t4a.pdf 

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche
6.3. Size:210K st
mjd45h11t4-a.pdf 

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche
6.4. Size:395K st
mjd44h11 mjd45h11.pdf 

MJD44H11, MJD45H11 Complementary power transistors Datasheet - production data . Features Low collector-emitter saturation voltage TAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications DPAK TO-252 Power amplifier Switching circuits Description Figure 1. Internal schematic diagram These d
6.5. Size:158K fairchild semi
mjd45h11.pdf 

April 2010 MJD45H11 PNP Epitaxial Silicon Transistor Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Features Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK -I Suffix) Electrically Similar to Popular MJE45H D-PAK I-PAK 11 Fast Switching Spe
6.6. Size:236K nxp
mjd45h11.pdf 

MJD45H11 80 V, 8 A PNP high power bipolar transistor 12 September 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement MJD44H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect
6.7. Size:286K onsemi
mjd45h11.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.8. Size:148K onsemi
mjd45h11t4g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
6.9. Size:148K onsemi
mjd45h11-1g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
6.10. Size:148K onsemi
mjd45h11g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
6.11. Size:148K onsemi
njvmjd44h11 njvmjd45h11.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
6.12. Size:126K onsemi
mjd44h11 mjd45h11.pdf 

MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee
6.13. Size:243K inchange semiconductor
mjd45h11.pdf 

isc Silicon PNP Power Transistors MJD45H11 DESCRIPTION Low Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 8A CE(sat C Fast Switching Speeds Complement to Type MJD44H11 DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pourpose power amplification and switchi
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