Биполярный транзистор MJD50T4G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJD50T4G
Маркировка: J50G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO-252
MJD50T4G Datasheet (PDF)
mjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50High Voltage PowerTransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)1 AMPERE Electrically Similar to Popular
njvmjd47t4g njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
mjd47tf mjd50tf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mjd50tf.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR RMJD50TF Package MAIN CHARACTERISTICS I 1.0A CV 400V CEOP (DPAK) 15W C DPAK APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050