UNISONIC TECHNOLOGIES CO., LTD MMBT1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION Complement to UTC MMBT1616/A 1 2SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT1116G-x-AE3-R SOT-23 E B C Tape ReelMMBT1116AG-x-AE3-R SOT-23 E B C Tape ReelNote: Pin Assignment: E: Emitter B: Ba

UNISONIC TECHNOLOGIES CO., LTD MMBT1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION Complement to UTC MMBT1616/A 1 2SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT1116G-x-AE3-R SOT-23 E B C Tape ReelMMBT1116AG-x-AE3-R SOT-23 E B C Tape ReelNote: Pin Assignment: E: Emitter B: Ba

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT1010LT1/DMMBT1010LT1Low Saturation Voltage MSD1010T1Motorola Preferred DevicesPNP Silicon Driver TransistorsPart of the GreenLine Portfolio of devices with energyconserving traits.This PNP Silicon Epitaxial Planar Transistor is designed to conserve energyPNP GENERALin general purpose driver applicatio

PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.2SOT-23TO-92 111. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark: N1/N1AMark: PN100/PN100AAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Paramet

October 2008PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.CETO-92SOT-23B11. Emitter 2. Base 3. CollectorMark: PN100/PN100AAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCEO Collector

MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching CDim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B C"Green" Device (Notes 2 and 4) B 1.20 1.40 TOP VIEWB ED C 2.30 2.50 E

MMBT1616AFeatures Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150

MCCMMBT1015-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMBT1015-H Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current

MCCMMBT1015-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMBT1015-H Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current

MMBT1815-LMCCMicro Commercial ComponentsTMMMBT1815-H20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939NPN EPITAXIALFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates SILICON TRANSISTORRoHS Compliant. See ordering information) Collector-Emitter voltage: BVCEO=50V Collector current up t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT1015G-x-AC3-R SOT-113 E B C Tape ReelMMBT1015G-x-AE3-R

UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BVCEO=50V * Collector Current up to 150mA * High hFE Linearity * Complement to MMBT1015 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT1815G-x-AC3-R SOT-113 E B C Tape ReelMMBT1815G-x-AE3-R S

UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 21SOT-23(JEDEC TO-236) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3MMBT1616L-x-AE3-R MMBT1616G-x-AE3-R SOT-23 B E C Tape ReelMM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors J C T MMBT1616A TRANSISTOR (NPN) SOT23 FEATURES Audio frequency power amplifier Medium speed switching MARKING:16A 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO Collector-Base Voltage 120 V VCEO Coll

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT1616 TRANSISTOR (NPN) SOT23 FEATURES Audio frequency power amplifier Medium speed switching MARKING:16 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO Collector-Base Voltage 60 V VCEO Collector-Emit