MMBT2131T1G datasheet, аналоги, основные параметры
Наименование производителя: MMBT2131T1G 📄📄
Маркировка: DB
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.342 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.7 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: SOT-26 SOT-457
Аналоги (замена) для MMBT2131T1G
- подборⓘ биполярного транзистора по параметрам
MMBT2131T1G даташит
mmbt2131t1g.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
mmbt2131t1-d.pdf
MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device MMBT2132T1/T3) http //onsemi.com NOTE Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES Features 30 VOLTS - V(BR)CEO Pb-Free Package is Available 342 mW MAXIMUM RATINGS (TC = 25 C unless otherwise noted) COLLECTOR Rating Symbol Value Unit PINS 2, 5 Collector
mmbt2132t3-d.pdf
MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http //onsemi.com Features Pb-Free Package is Available 0.7 AMPS MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 30 VOLTS - V(BR)CEO Rating Symbol Value Unit 342 mW Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 40 V COLLECTOR PINS 2, 5 Emitter-Base Voltage VEBO 5.0 V BASE Collector
mmbt2369.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2369LT1/D MMBT2369LT1 Switching Transistors COLLECTOR * MMBT2369ALT1 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector Emitter Voltage VCEO 15 Vdc 2 Collector Emitter Voltage VCES 40 Vdc Collector Base Voltage VCBO 40 Vdc CASE 318 08, STYL
mmbt2222awt1rev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1
mmbt2222lt1rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23
mmbt2907.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907LT1/D MMBT2907LT1 General Purpose Transistors * MMBT2907ALT1 COLLECTOR PNP Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2907 2907A Unit 2 Collector Emitter Voltage VCEO 40 60 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 Vdc SOT 23 (T
mmbt2222.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23
mmbt2907lt1rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907LT1/D MMBT2907LT1 General Purpose Transistors * MMBT2907ALT1 COLLECTOR PNP Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2907 2907A Unit 2 Collector Emitter Voltage VCEO 40 60 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 Vdc SOT 23 (T
mmbt2907awt1rev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907AWT1/D Preliminary Information MMBT2907AWT1 General Purpose Transistor PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1
mmbt2222a 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Switching and linear amplification.
mmbt2222a.pdf
MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOL
mmbt2907a.pdf
MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking MMBT2907A M29 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT2222A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOL
mmbt2369.pdf
MMBT2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. C E SOT-23 B Mark 1J Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V
mmbt2907 pn2907.pdf
Discrete POWER & Signal Technologies PN2907 MMBT2907 C E C TO-92 B B E SOT-23 Mark 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VC
mmbt2222at.pdf
September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking A02 SOT-523F Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Colle
mmbt2222ak.pdf
MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW
pn2222a mmbt2222a pzt2222a.pdf
August 2010 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U
mmbt2907ak.pdf
MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350
pzt2907a pn2907a mmbt2907a.pdf
PN2907A MMBT2907A PZT2907A C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO C
mmbt2484 pn2484.pdf
PN2484 MMBT2484 C E C TO-92 SOT-23 B B E Mark 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Volt
pn200-a mmbt200-a.pdf
PN200 MMBT200 PN200A MMBT200A C E C TO-92 SOT-23 B B E Mark N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V
mmbt2369 pn2369.pdf
February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit
mmbt2222a.pdf
PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collecto
mmbt2222.pdf
MMBT2222 NPN General Purpose Amplifier Sourced from process 19. C E SOT-23 B Mark 1B Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 0.6 A TJ, TSTG Operating and Storage Junction Temperature Range -55
pn2369a mmbt2369a.pdf
PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo
mmbt2222a.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
mmbt2907at.pdf
MMBT2907AT 60V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -60V Case SOT523 Case Material Molded Plastic, Green Molding Compound. IC = -600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminal
mmbt2222at.pdf
MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals
mmbt2222alp4.pdf
MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case X2-DFN1006-3 Case Material Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu
mmbt2222a.pdf
MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Type MMBT2907A Case Material Molded Plastic, Green Molding Compound; Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
mmbt2907a.pdf
MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Compound; Complementary NPN Type MMBT2222A UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) M
smbt2222a mmbt2222a.pdf
SMBT2222A/MMBT2222A NPN Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1P SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter
smbt2907a mmbt2907a.pdf
SMBT2907A/MMBT2907A PNP Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2F SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 60 V Collector-emitter
mmbt2907at.pdf
MMBT2907AT Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified SOT-523 Operating Junction Temperature Range -55 to
mmbt2222at.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Diss
mmbt2907a sot-23.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2907A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 350mWatts of Pd, 600mA continuous collector current. PNP General Operatingand Storage JunctionT
mmbt2222at sot-523.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Dissipation Purpose Amplifier Operating and Storage Junction T
mmbt2907a.pdf
MMBT2907A Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -5
mmbt2222a sot-23.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA NPN General Operating and Storage Junction Temperature -55 C to +150 C Thermal resistance,Junction to Ambient 500oC/
mmbt2369l mmbt2369al.pdf
MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and MARKING PPAP Capable DIAGRAM These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 xxx MG CASE 318 G STYLE 6 MAXIMUM RATINGS 1 Rating Symbo
mmbt2222l mmbt2222al smmbt2222al.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon www.onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Valu
mmbt2484lt1-d.pdf
MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH
mmbt2222am3.pdf
MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce
mmbt2222alt1g.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo
pn2907abu pn2907atf pn2907atfr pn2907ata pn2907atar mmbt2907a mmbt2907a d87z pzt2907a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt2222att1-d.pdf
MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25
mmbt2907am3.pdf
MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce
nsvmmbt2907awt1g.pdf
MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Re
mmbt2907alt1-d.pdf
MMBT2907ALT1G General Purpose Transistors PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc
mmbt2907al smmbt2907al.pdf
MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Co
mmbt2484lt1g.pdf
MMBT2484LT1G Low Noise Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc 2 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc 3 THERMAL C
mmbt2222att1g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
nsvmmbt2222att1g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
mmbt2222att3g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
pn200a mmbt200.pdf
PN200A / MMBT200 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. C E TO-92 B SOT-23 EBC Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-2
mmbt2222alt3g.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo
mmbt2222am3t5g.pdf
MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces B
mmbt2222awt1g smmbt2222awt1g.pdf
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni
mmbt2222att1g nsvmmbt2222att1g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
mmbt2484lt3g.pdf
MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH
pn2907 mmbt2907.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
mmbt2222lt1-alt1.pdf
MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2 MMBT2222LT1G 30 MMBT2222ALT1G 40 EMITTER Collector-Base Voltage VCBO Vdc MMBT2222LT1G 60 3 MMBT2222ALT1G 75
mmbt2222awt1g.pdf
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni
mmbt2369alt1g.pdf
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 M
mmbt2222awt3g.pdf
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni
mmbt2907alt3g.pdf
MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit
mmbt2907am3t5g.pdf
MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduces B
mmbt2907awt1g nsvmmbt2907awt1g.pdf
MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requ
mmbt2907awt1-d.pdf
MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symb
pn2907a mmbt2907a pzt2907a.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
mmbt2907awt1g.pdf
MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Re
mmbt2369lt1.pdf
MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc 2 EMITTER Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 4.5 Vd
mmbt2369lt1g.pdf
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 M
mmbt2222lt1g.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo
mmbt2907alt1g.pdf
MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit
mmbt2222awt1-d.pdf
MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbo
mmbt2222a.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3 3 AMPLIFIER 1 1 2 2 FEATURES SOT-23 SOT-323 (JEDEC TO-236) * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 1 2 SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3 MMBT
mmbt2907a.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT2907AG-AE3-R SOT-23 E B C Tape Reel MMBT2907AG-AL3-R SOT-323 E
mmbt222a.pdf
MMBT2222A NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT2907A SOT-23 Ordering Information Type NO. Marking Package Code 1P MMBT2222A SOT-23 Device
mmbt2907a.pdf
MMBT2907A PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation SOT-23 Complementary pair with MMBT2222A Ordering Information Type NO. Marking Package Code 2F MMBT2907A SOT-23
mmbt2907aw.pdf
MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Complementary NPN Type Available(MMBT2222AW) 3 3 Epitaxial Planar Die Construction Top View C B Ideal for Medium Power Amplification and Switching 1 1 2 2 K E D COLLECTOR H J F G 3 M
mmbt2907q.pdf
MMBT2907Q PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product D D1 A * Features SOT-89 b1 1 Power dissipation 2 b C e O 3 PCM 1.25 W (Temp.= 25 C) e1 1.B AS E Collector current Dimensions In Millimeters Dimensions In Inches 2.C OLLE C T OR Symbol ICM -0.6 A 3 Min Max Min Max 3.E MIT T E R A 1.400 1.600 0.055 0.063 Collector
mmbt2222at.pdf
MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim
mmbt2907fw.pdf
MMBT2907FW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 A L 3 FEATURES 3 Top View C B Epitaxial Planar Die Construction 1 1 2 Complementary NPN Type Available(MMBT2222FW) 2 K E Collector Ideal for Medium Power Amplification and Switching D MAR
mmbt2222a.pdf
MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A COLLECTOR L Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available S Top View B (MMBT2907A) 1 1 1 2 Ideal for Medium Power Amplification and BASE 2 Switching V G 2 EMITTER C H J D K MAXIMUM
mmbt2222q.pdf
MMBT2222Q NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-89 1.BASE D Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR D1 Symbol A Min Max Min Max 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 FEATURES b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 b1 Power d
mmbt2907a.pdf
MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type Available A (MMBT2222A) COLLECTOR L Ideal for Medium Power Amplification and 3 3 3 Switching S Top View B 1 1 1 2 BASE 2 V G 2 EMITTER C H J D K MAXIMUM
mmbt2222aw.pdf
MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) A L Epitaxial Planar Die Construction 3 3 Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MM
mmbt2222a.pdf
MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21
mmbt2907a.pdf
MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical
mmbt2907at.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES SOT 523 Complementary to NPN Type (MMBT2222AT) Small Package MARKING 2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -60 V 3. CO
mmbt2222am.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT2222AM TRANSISTOR (NPN) SOT-723 FEATURES 3 3 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM) 1 1. BASE 2 2.EMITTER MARKING 1P 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V
mmbt2222at.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT2907AT Small Package MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL
mmbt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40
mmbt2907a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking 2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
mmbt2222agh.pdf
Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2222AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Char
mmbt2907agh.pdf
Zowie Technology Corporation General Purpose Transistor PNP Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2907AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -600 mAdc THERMAL CHARACTERISTICS
mmbt2222a.pdf
MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Current -C
mmbt2222.pdf
MMBT2222 TRANSISTOR(NPN) SOT 23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO 2. EMITTER V Collector-Emitter Voltage 30 V CEO 3. COLLECTOR V Emitter-Base Voltage 6 V EBO IC Collector Current 600 mA P Collector Power Dissipation 250 mW C R Thermal R
mmbt2907a.pdf
MMBT2907A TRANSISTPR(PNP) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current
mmbt2907a sot-23.pdf
MMBT2907A SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING 2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emit
mmmbt2222a sot-23.pdf
MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit
mmbt2222alt1.pdf
MMBT2222ALT1 NPN General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10 E B 1.10 1.50 Complementary PNP type available K B C 1.0 Typical MMBT2907A. D 0.4 Typical E 0.35 0.48 J D Ultra-small surface mount package. G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIO
mmbt2907a.pdf
MMBT2907A PNP General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR A SOT-23 FEATURES Dim Min Max A 2.70 3.10 E Epitaxial planar die construction. B 1.10 1.50 K B C 1.0 Typical Complementary NPN type available D 0.4 Typical E 0.35 0.48 J MMBT2222A. D G 1.80 2.00 G H 0.02 0.1 Ideal for medium power amplification and switching. J 0.1 Typical H K 2.20 2.6
mmbt2907at.pdf
MMBT2907AT COLLECTOR 3 PNP General Purpose Transistors 3 1 1 2 BASE 2 SOT-523(SC-75) EMITTER MAXIMUM RATINGS Value Rating Symbol Unit -60 Collector-Emitter Voltage V CEO Vdc -60 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 THERMAL CHARACTERISTICS Characteristics Symbol Unit Max (1) Total Device Dissipa
mmbt2907aw.pdf
MMBT2907AW COLLECTOR 3 PNP General Purpose Transistors 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Value Rating Symbol Unit -60 Collector-Emitter Voltage V CEO Vdc -60 Collector-Base Voltage VCBO Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 THERMAL CHARACTERISTICS Characteristics Symbol Unit Max Total Device Dissipation
mmbt2222at.pdf
MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Ma
mmbt2907.pdf
MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit -60 Collector-Emitter Voltage V -40 CEO Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 THERMAL CHARACTERISTICS Characteristics Symbol Unit Max Total Device Dis
mmbt2222.pdf
MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO u WEITRON http //www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS - DC Current Gain hFE (IC=0.1 mAdc, VCE=10 Vdc) 35 - (IC=1.0 mAdc, VCE=10 Vdc) 50 - - (IC=10 mAdc, VCE=10 Vdc) 75 - 35 (IC=10 mAdc, VCE=10 Vdc, TA=-
mmbt2222aw.pdf
MMBT2222AW 3 1 2 SOT-323(SC-70) Value VCEO 150 833 T ,Tstg -55 to+150 J MMBT2222AW=P1 (1) u 1. Pulse Test Pulse Width 300us, Duty Cycle 2.0% WEITRON http //www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS(1) DC Current Gain - (IC=0.1 mAdc, VCE=10 Vdc) 35 - (
mmbt2222awt1.pdf
FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silic
mmbt2907awt1.pdf
FM120-M WILLAS THRU MMBT2907AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon Low profile surface mounted application in order t
mmbt2907-a-lt1.pdf
FM120-M WILLAS THRU MMBT2907(A)LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor SOD-123 PACKAGE Pb Free Product Package outline Features PNP Siliconesign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order
mmbt2222adw1t1.pdf
FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o
mmbt2369-a-lt1.pdf
FM120-M WILLAS THRU MMBT2369(A)LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Switching Transistors SOD-123 PACKAGE Pb Free Product Package outline Features We declare that the material of product compliance with RoHS requirements. Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD
mmbt2907adw1t1.pdf
FM120-M WILLAS MMBT2907ADW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to opti
mmbt2222att1.pdf
FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H Low profile surface mounted application in order
mmbt2222-a-lt1.pdf
FM120-M WILLAS THRU MMBT2222(A)LT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN Batch process design, excellent power dissipation offers Silicon better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in orde
mmbt2222a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V
mmbt2907a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V
mmbt2222a.pdf
Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
mmbt2907a.pdf
Spec. No. C305N3 Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2010.07.14 Page No. 1/ 6 General Purpose PNP Epitaxial Planar Transistor MMBT2907A Description The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. C
mmbt2222 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B
mmbt2907 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2907 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2222 MARKING 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B
mmbt2222a.pdf
MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit
mmbt2907a.pdf
MMBT2907A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents to 600mA. / Applications General purpose amplifier. / Equivalent Circuit / Pinni
mmbt2907 mmbt2907a.pdf
MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCEO V MMBT2907A 60 Emitter
mmbt2222 mmbt2222a.pdf
MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr
mmbt2907altg.pdf
MMBT2907ALTG PNP Silicon General Purpose Transistor Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Maximum Ratings 1 Rating Symbol 2907A Unit 2 Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc SOT 23 Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc 3 COLLECTOR
mmbt2222altg.pdf
MMBT2222LTG,MMBT2222ALTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Ordering Information 1 Device Package Shipping MMBT2222LTG SOT 23 3000/Tape & Reel 2 MMBT2222ALTG SOT 23 3000/Tape & Reel SOT 23 Maximum Ratings Rating Symbol 2222 2222A Unit 3 COLLECTOR Collector Emitter Vo
mmbt2907at.pdf
SMD Type Transistors PNP Transistors MMBT2907AT (KMBT2907AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2222AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Col
mmbt2222at.pdf
SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll
mmbt2222a.pdf
D e s st s NPN Transistors MMBT2222A (KMBT2222A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 ) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec
mmbt2907a.pdf
e s st s PNP Transistors MMBT2907A (KMBT2907A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector
mmbt2907aw.pdf
MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch (mm) SOT-323 POWER 225 mW VOLTAGE 60 Volts FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.054(1.35) Green molding compound as per IEC61249 Std.
mmbt2222a.pdf
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070
mmbt2907a.pdf
MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mW 60 Volts POWER VOLTAGE FEATURES 0.120(3.04) PNP epitaxial silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA 0.056(1.40) 0.047(1.20) MECHANICAL DATA
mmbt2907a-au.pdf
MMBT2907A-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 60 Volt FEATURES PNP epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20)
mmbt2222aw.pdf
MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 150 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-323, Plastic Te
mmbt2907a-g.pdf
General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.
mmbt2222a-g.pdf
Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight 0
mmbt2907-g.pdf
General Purpose Transistor MMBT2907-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -Device is designed as a general purpose 3 amplifier and switching. 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) 0.006 (0.15) Collector 3 0.002 (0.05) 0.066 (1.70) 0.044 (1.10) 0.103 (2.60) 0.035 (0.90) 0.086 (2.20) 1 Base 0.006 (0.15) max
mmbt2222a-hf.pdf
Small Signal Transistor MMBT2222A-HF (NPN) RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Ap
mmbt2907a.pdf
Product specification PNP General Purpose Amplifier MMBT2907A FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 6
gstmmbt2907a.pdf
GSTMMBT2907A PNP General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2907AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2907AF SOT-23 2F Ordering Information GS P/N GSTMMBT2907A F Pb Free
gstmmbt2222a.pdf
GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1P Ordering Information GS P/N GSTMMBT2222A F Pb Fre
mmbt2907.pdf
MMBT2907 TRANSISTOR PNP TRANSISTOR PNP TRANSISTOR PNP SOT-23 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I C Co
mmbt2222 mmbt2222a.pdf
MMBT2222/MMBT2222A FEATURES FEATURES FEATURES FEATURES NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Symbol Unit Characteristic MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO Collector-Base Voltage V 60 75 Vdc CBO Emitter-Base Voltage V 5.0 6.0 Vdc EBO Collector Current-Continuous Ic 600 600 mAdc THERMAL CHARACTERISTI
mmbt2222aw.pdf
MMBT2222AW NPN General Purpose Transistor 3 2 1.Base 2.Emitter 3.Collector 1 Features Simplified outline(SOT-323) General purpose transistor. 3.COLLECTOR 1.BASE 2.EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Devic
mmbt2222a.pdf
R UMW UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO
mmbt2222lt1.pdf
RoHS MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions(Unit mm) Medium Power Amplifier. NPN Silicon Transistor. 2.3 0.2 1.3 0.2 0.5Ref. hFE RANK 0.5Ref. Features Large collector current ICmax=600mA 2 3 Low collector saturation voltage 1P enabling low voltage operation 1 Complementary pair with . Type Name 0.38Ref. MINO.1 0.01-0.10 1.EMITTER 2.BASE
mmbt2907a.pdf
MMBT2907A SOT-23 Features (TO-236) PNP Silicon Epitaxial Planar Transistor For Switching and Amplifier Applications. Marking 2F The transistor is subdivided into one group according to its DC current gain 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 , unless otherwisenoted) A Parameter Symbol Value Unit Collector Base Voltage -V 60 V CBO Collector
mmbt2045.pdf
MMBT2045 SOT-23-6LPlastic-Encapsulate Transistors Dual 40V complementary transistors FEATURES SOT-23-6L 40V complementary device High hFE Mounting cost and area can be cut in half MARKING EQUIVALENT CIRCUIT PIN1 Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25 ) Value Symbol Parameter Unit NPN PNP VCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Vo
mmbt2222a.pdf
MMBT2222A Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT
mmbt2907a.pdf
MMBT2907A Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V 1. BASE VCEO Collector-Emitter Voltage -60 V 2. EMITTE
mmbt2907 mmbt2907a.pdf
SMD PNP Transistor Formosa MS MMBT2907 / MMBT2907A General Purpose PNP Transistor Package outline SOT-23 Features High collector-emitterbreakdien voltage. PNP silicon epitaxial planar transistor, is designed for general purpose and amplifier applications. Capable of 225mW power dissipation. Lead-free parts meet RoHS requirments. (B) (C) Suffix "-H" indicates Ha
mmbt2222 mmbt2222a.pdf
SMD NPN Transistor Formosa MS MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 40V@I =10mA) CEO C Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW pow
mmbt2222a.pdf
MMBT2222A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking 1P Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO C I Collector Current 600 mA C P Collector Power D
mmbt2907a.pdf
MMBT2907A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) SOT- 23 Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Marking 2F Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -5 V EBO C I Collector Current -600 mA C P Collector P
mmbt2222a.pdf
MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu
mmbt2907a.pdf
MMBT2907A PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 600mA as a switch and to 100MHz as a
mmbt2222a.pdf
Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Vo
mmbt2907a.pdf
MMBT2907A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking 2F 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V V
mmbt2907a-ms.pdf
www.msksemi.com MMBT2907A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A- MS) 1. BASE Marking 2F 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter
mmbt2222a-ms.pdf
www.msksemi.com MMBT2222A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A- MS) 1. BASE MARKING 1P 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Em
mmbt2222a.pdf
DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 MAXIMUM RATINGS
mmbt2907a.pdf
DATA SHEET MMBT2907A GENERAL PURPOSE TRANSISTOR PNP VOLTAGE -60 Volts POWER 300 mW FEATURES HIGH DC CURRENT GAIN. LOW COLLECTOR-EMITTER SATURATION VOLTAGE BOTH NORMAL AND PB-FREE PACKAGE ARE AVAILABLE. LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT 0.008GRAM CASE SOT-23 MAXIM
mmbt2907 mmbt2907a.pdf
MMBT2907/MMBT2907A PNP Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 The transistor is subdivided into one group according 1 to its DC current gain. 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCEO V MMBT2907A 60
mmbt2222 mmbt2222a.pdf
MMBT2222/MMBT2222A NPN Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 1 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector
mmbt2907a-l mmbt2907a-h.pdf
Jingdao Microelectronics co.LTD MMBT2907A MMBT2907A SOT-23 PNP TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -60 V 2.EMITTER 3.COLLECTOR Colle
mmbt2222a-l mmbt2222a-h.pdf
Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte
mmbt2907a.pdf
MMBT2907A SOT-23 BIPOLAR TRANSISTORS (PNP) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) Collector current * ICM -0.6 A * Collector-base voltage V(BR)CBO -60 V SOT-23 Operating and storage junction temperature range * TJ,Tstg -55OCto+150OC COLLECTOR 3 MECHANICAL DATA 1 * Case Molded plastic BASE 0.055(1.40) * Epoxy UL 94V-O rate flame retardant 0.047(1.20) 2 * L
mmbt2222a.pdf
MMBT2222A SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD
mmbt2907a.pdf
MMBT2907A SOT-23 PNP Transistors 3 2 1.Base 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2F Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC 600 mA Power Dissipation PD 250
mmbt2907.pdf
MMBT2907 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP FEATURES Complimentary to MMBT2222 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO E
mmbt2222.pdf
MMBT2222 SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 75 V VCEO Collector-Emitter Voltage -
mmbt2222a.pdf
MMBT2222A AO3400 SI2305 MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage
mmbt2907a.pdf
MMBT2907A AO3400 SI2305 SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Base 2.Emitter 3.Collector Marking 2F SOT-23 Plastic Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -60 V Collector-Base Voltage VCEO Collector-Emitte
mmbt2907aq.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2907AQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data SOT-23 Case Terminals Tin plated lea
mmbt2222a.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flamm
mmbt2907a.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2907A PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94
mmbt2222aq.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated lead
mmbt2222e mmbt2222ae.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage
mmbt2222a.pdf
MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT2222A 1P . Maximu
mmbt2907 mmbt2907a.pdf
MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. Base 2.Emitter 3.Collector SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCE
mmbt2222a.pdf
MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren
mmbt2222a.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO - Collector-Base Voltage V 60 75 Vdc CBO -
mmbt2907a.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2907A FEATURES PNP Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2907 MMBT2907A Collector-Emitter Voltage V -40 -60 Vdc CEO - Collector-Base Voltage V -60 -60 Vdc CBO -
mmbt2222a.pdf
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 75Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S
mmbt2907a.pdf
MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-60V. Collector current IC=-0.6A. ansition frequency fT>200MHz @ IC=- Tr 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal
mmbt2222a.pdf
MMBT2222A BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit C
mmbt2907.pdf
A MMBT2907 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT2222 General purpose Amplifier Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collecto
mmbt2907a.pdf
MMBT2907A C Silicon Epitaxial Planar Transistor( PNP) E Features B Epitaxial planar die construction. SOT-23 Mark 2F Complementary NPN Type available(MMBT2222A) Absolute Maximum Ratings* T= 25 C unless otherwise noted A Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO VCEO V Collector-Emitter Voltage - 60 V Emitter-Base Voltage EBO - 5 V I Collector Curren
mmbt2222a.pdf
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A SOT-23 C Dim Min Max A 0.37 0.51 B C 1.20 1.40 B TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.903
mmbt2907a.pdf
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction. NPN complement MMBT2222A A SOT-23 Ideal for Medium Power Amplification and C Dim Min Max Switching. A 0.37 0.51 B C Marking Code 2F B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.90
mmbt2907a.pdf
isc Silicon PNP Transistor MMBT2907A DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO
Другие транзисторы: MMBT1015-H, MMBT1015-L, MMBT1116, MMBT1116A, MMBT1616, MMBT1616A, MMBT1815-H, MMBT1815-L, TIP122, MMBT2222A-G, MMBT2222AGH, MMBT2222A-HF, MMBT2222ALP4, MMBT2222ALT1G, MMBT2222ALT3G, MMBT2222ALTG, MMBT2222AM3T5G
History: 2SD2400 | MMBT1815-L
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mdp1991 datasheet | 40636 transistor | ao3407 datasheet | c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet