Справочник транзисторов. MMBT2222ALP4

 

Биполярный транзистор MMBT2222ALP4 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBT2222ALP4
   Маркировка: 2S
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.46 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: X2-DFN1006-3

 Аналоги (замена) для MMBT2222ALP4

 

 

MMBT2222ALP4 Datasheet (PDF)

 ..1. Size:149K  diodes
mmbt2222alp4.pdf

MMBT2222ALP4 MMBT2222ALP4

MMBT2222ALP440V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

 4.1. Size:159K  onsemi
mmbt2222l mmbt2222al smmbt2222al.pdf

MMBT2222ALP4 MMBT2222ALP4

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASE2MAXIMUM RATINGSEMITTERRating Symbol Valu

 4.2. Size:134K  onsemi
mmbt2222alt1g.pdf

MMBT2222ALP4 MMBT2222ALP4

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

 4.3. Size:134K  onsemi
mmbt2222alt3g.pdf

MMBT2222ALP4 MMBT2222ALP4

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

 4.4. Size:1684K  lge
mmbt2222alt1.pdf

MMBT2222ALP4 MMBT2222ALP4

MMBT2222ALT1 NPN General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10EB 1.10 1.50 Complementary PNP type available K BC 1.0 TypicalMMBT2907A. D 0.4 TypicalE 0.35 0.48JD Ultra-small surface mount package. G 1.80 2.00GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIO

 4.5. Size:146K  first silicon
mmbt2222altg.pdf

MMBT2222ALP4 MMBT2222ALP4

MMBT2222LTG,MMBT2222ALTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish3Ordering Information1Device Package ShippingMMBT2222LTG SOT23 3000/Tape & Reel 2MMBT2222ALTG SOT23 3000/Tape & ReelSOT23Maximum RatingsRating Symbol 2222 2222A Unit3COLLECTORCollectorEmitter Vo

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