Справочник транзисторов. MMBT2222ATT1G

 

Биполярный транзистор MMBT2222ATT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBT2222ATT1G
   Маркировка: 1P
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: SOT-416

 Аналоги (замена) для MMBT2222ATT1G

 

 

MMBT2222ATT1G Datasheet (PDF)

 ..1. Size:123K  onsemi
mmbt2222att1g.pdf

MMBT2222ATT1G MMBT2222ATT1G

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

 ..2. Size:119K  onsemi
mmbt2222att1g nsvmmbt2222att1g.pdf

MMBT2222ATT1G MMBT2222ATT1G

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

 0.1. Size:123K  onsemi
nsvmmbt2222att1g.pdf

MMBT2222ATT1G MMBT2222ATT1G

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

 2.1. Size:114K  onsemi
mmbt2222att1-d.pdf

MMBT2222ATT1G MMBT2222ATT1G

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

 2.2. Size:357K  willas
mmbt2222att1.pdf

MMBT2222ATT1G MMBT2222ATT1G

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

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