Биполярный транзистор MMBT3906WGH - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBT3906WGH
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-323
Аналоги (замена) для MMBT3906WGH
MMBT3906WGH Datasheet (PDF)
mmbt3906wgh.pdf
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Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3906WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -200 mAdcTHERMAL CHARACTERISTICS
mmbt3906wg.pdf
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Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconCOLLECTOR33BASE11MMBT3906WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max. UnitoT
mmbt3904w mmbt3906wt1 mmbt3904 06.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO
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MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an
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MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian
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MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref
mmbt3906w.pdf
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MMBT3906WPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESA suffix of "-C" specifies halogen & lead-freeSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min Max Complementary NPN Type Available(MMBT3904W) A 1.800 2.200 Ideal for Medium Power Amplification andB 1.150 1.350ASwitchingL C 0.800 1.000"Lead free is availab
mmbt3906w.pdf
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MMBT3906WCOLLECTOR3General Purpose Transistor3PNP Silicon1BASE122EMITTERSOT-323(SC-70)M aximum R atingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-200Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipati
mmbt3906w.pdf
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SMD Type TransistorsPNP TransistorsMMBT3906W Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-40V Complementary to MMBT3904W1 Base2 Emitter3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Col
mmbt3906w.pdf
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MMBT3906WMMBT3906WMMBT3906WMMBT3906WMMBT39 0 6W TRANSISTOR(PNP)for switching and amplifier applications SOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 200 mA Total Po
mmbt3906w.pdf
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MMBT3906W MMBT3906W SOT-323 Silicon General Purpose Transistor (PNP) General description SOT-323 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter Symbol Value Unit Collector Base
mmbt3906w.pdf
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MMBT3906W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 3NOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O
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