MMBT3906WT1G datasheet, аналоги, основные параметры

Наименование производителя: MMBT3906WT1G  📄📄 

Маркировка: 2A

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT-323

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MMBT3906WT1G даташит

 ..1. Size:128K  onsemi
 mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf pdf_icon

MMBT3906WT1G

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive an

 ..2. Size:1411K  onsemi
 mmbt3904wt1g mmbt3906wt1g.pdf pdf_icon

MMBT3906WT1G

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http //onsemi.com NPN and PNP Silicon COLLECTOR These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE Features AEC-Q101 Qualified and PPAP Capable 2 S Pref

 3.1. Size:423K  motorola
 mmbt3904w mmbt3906wt1 mmbt3904 06.pdf pdf_icon

MMBT3906WT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

 3.2. Size:297K  motorola
 mmbt3904wt1 mmbt3906wt1.pdf pdf_icon

MMBT3906WT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

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Другие транзисторы: MMBT3906-G, MMBT3906-HF, MMBT3906LT1G, MMBT3906LTG, MMBT3906SL, MMBT3906TT1G, MMBT3906WG, MMBT3906WGH, 2222A, MMBT4124LT1G, MMBT4126LT1G, MMBT4400, MMBT4401-G, MMBT4401GH, MMBT4401LT1G, MMBT4401M3, MMBT4401WT1G