MMBT8099LT1G datasheet и подбор замены

 ..1. Size:179K  onsemi
 mmbt8099lt1g.pdf 

MMBT8099LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 80 Vdc 2 Collector-Base Voltage VCBO 80 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc 3 THERMAL C

 3.1. Size:158K  onsemi
 mmbt8099lt1.pdf 

MMBT8099LT1G Amplifier Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc 3 THERMAL

 8.1. Size:229K  semtech
 mmbt8050c mmbt8050d.pdf 

 8.2. Size:373K  semtech
 mmbt8050cw mmbt8050dw.pdf 

MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Peak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Te

 8.3. Size:351K  bytesonic
 mmbt8050d.pdf 

MMBT8050D o TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat

 8.4. Size:325K  topdiode
 mmbt8050.pdf 

Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com

 8.5. Size:150K  wej
 mmbt8050lt1.pdf 

RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 1. Complement to MMPT8550LT1 1.BASE Collector Current Ic=500mA 2.EMITTER o 2.4 Collector Dissipation Pc=225mW(Tc=25 C) 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Volta

 8.6. Size:488K  agertech
 mmbt8050c mmbt8050d.pdf 

MMBT8050C/D(1.5A) Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation PD 350 mW

 8.7. Size:498K  pjsemi
 mmbt8050-c mmbt8050-d.pdf 

MMBT8050 NPN Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT8550 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V

 8.8. Size:1986K  pjsemi
 mmbt8050c-1.5a mmbt8050d-1.5a.pdf 

MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT8050C-1.5A X1 MMBT8050D-1.5A Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40