MMBTA05W datasheet, аналоги, основные параметры
Наименование производителя: MMBTA05W 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT-323
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Аналоги (замена) для MMBTA05W
- подборⓘ биполярного транзистора по параметрам
MMBTA05W даташит
..1. Size:465K tiptek
mmbta05w mmbta06w.pdf 
MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE 98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASE SOT-323 TERMINALS SOLDERABLE PER MIL-STD-202G, MET
7.1. Size:82K motorola
mmbta05l mmbta06.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA05LT1/D MMBTA05LT1 Driver Transistors MMBTA06LT1* NPN Silicon COLLECTOR *Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector Emitter Voltage VCEO 60 80 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 80 Vdc Emit
7.2. Size:50K fairchild semi
mpsa05 mmbta05.pdf 
MPSA05/MMBTA05 NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 Mark 1H 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter V
7.3. Size:250K diodes
mmbta05 mmbta06.pdf 
MMBTA05 / MMBTA06 NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant
7.4. Size:763K mcc
mmbta05 mmbta06.pdf 
M C C MMBTA05 TM Micro Commercial Components Micro Commercial Components THRU 20736 Marilla Street Chatsworth CA 91311 MMBTA06 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56) General Purpose Ideal
7.6. Size:114K onsemi
mmbta05lt1g.pdf 
MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3
7.7. Size:342K onsemi
mpsa05 mmbta05.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.8. Size:98K onsemi
mmbta05l mmbta06l.pdf 
MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector
7.9. Size:103K onsemi
mmbta05lt1 mmbta06lt1.pdf 
MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO Vdc EMITTER MMBTA05LT1 60 MMBTA06LT1 80 3 Collector-Base Voltage VCBO Vdc MMBTA05LT1 60 1 MMBTA06LT1 80 2 Emitter-Base Vo
7.10. Size:72K onsemi
nsvmmbta05lt1g.pdf 
MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring http //onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collec
7.11. Size:164K utc
mmbta05.pdf 
UNISONIC TECHNOLOGIES CO., LTD MMBTA05 Preliminary AMPLIFIER TRANSISTOR NPN MMBTA05 FEATURES * Collector-Emitter Voltage VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA05L-AL3-R MMBTA05G-AL3-R SOT-323 B E C Tape Reel Note Pin assignment E EMITTER, C COLLECTOR, B BASE MARKING www.unisonic.com.tw 1
7.12. Size:318K secos
mmbta05.pdf 
MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor A L 3 3 FEATURES Top View C B 1 Driver Transistor 1 2 2 K E D MARKING H J F G Collector C Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2
7.13. Size:1339K jiangsu
mmbta05.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING 1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4
7.14. Size:35K kec
mmbta05.pdf 
SEMICONDUCTOR MMBTA05 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA55. _ + 2.93 0.20 A B 1.30+0.20/-0.15 Driver Stage Application of 20 to 25 Watts Amplifiers. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0
7.15. Size:1017K htsemi
mmbta05.pdf 
MMBTA05 TRANSISTOR(NPN) SOT-23 FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING 1H MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Juncti
7.16. Size:161K lge
mmbta05 mmbta06.pdf 
MMBTA05/MMBTA06 NPN General Purpose Transistor SOT-23 Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. Applications Dimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M
7.17. Size:243K wietron
mmbta05-06.pdf 
MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 MMBTA05 MMBTA06 VCEO 60 80 60 80 4.0 4.0 MMBTA05=1H, MMBTA06=1GM (3) 60 MMBTA05 MMBTA06 80 0 MMBTA05 60 MMBTA06 80 0 4.0 u 0.1 I =0) S B 0.1 6 MMBTA05 u 0.1 8 MMBTA06 _ _
7.18. Size:1205K kexin
mmbta05.pdf 
SMD Type Transistors NPN Transistors MMBTA05 (KMBTA05) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=60V 1 2 Driver transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
7.19. Size:394K panjit
mmbta05-au mmbta06-au mmbta55-au mmbta56-au.pdf 
PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (
7.20. Size:483K panjit
mmbta05 mmbta06 mmbta55 mmbta56.pdf 
PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case SOT-23 Package Terminals Solderable
7.21. Size:827K umw-ic
mmbta05.pdf 
R UMW UMW MMBTA05 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING 1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continu
7.25. Size:290K cn yangzhou yangjie elec
mmbta05 mmbta06.pdf 
RoHS RoHS COMPLIANT COMPLIANT MMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Moldi
Другие транзисторы: MMBT9013LT1, MMBT9014LT1, MMBT9015LT1, MMBT9018LT1, MMBT918LT1G, MMBT945-H, MMBT945-L, MMBTA05LT1G, A1941, MMBTA06LT1G, MMBTA06W, MMBTA06WT1G, MMBTA10, MMBTA10Q, MMBTA11, MMBTA13LT1G, MMBTA14LT1G
