Биполярный транзистор PBHV8118T - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBHV8118T
Маркировка: LZ*
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 180 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Ёмкость коллекторного перехода (Cc): 5.7 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SOT-23
Аналоги (замена) для PBHV8118T
PBHV8118T Datasheet (PDF)
pbhv8118t.pdf
PBHV8118T180 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs
pbhv8118t.pdf
PBHV8118T180 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs
pbhv8115z.pdf
PBHV8115Z150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 9 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115Z.1.2 Features High voltage Low collector-emitter
pbhv8115tlh.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8115x.pdf
PBHV8115X150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor9 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115X.2. Features and benefits High voltage Low collector-emitter s
pbhv8115z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8115t.pdf
PBHV8115T150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 4 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115T.1.2 Features High voltage Low collector-emitter satu
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