Справочник транзисторов. CHDTC123JKGP

 

Биполярный транзистор CHDTC123JKGP - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CHDTC123JKGP
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT-23

 Аналоги (замена) для CHDTC123JKGP

 

 

CHDTC123JKGP Datasheet (PDF)

 ..1. Size:127K  chenmko
chdtc123jkgp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123JKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 5.1. Size:150K  chenmko
chdtc123jegp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123JEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 5.2. Size:134K  chenmko
chdtc123jugp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123JUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.1. Size:131K  chenmko
chdtc123eugp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.2. Size:109K  chenmko
chdtc123yegp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123YEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.3. Size:94K  chenmko
chdtc123yugp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123YUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.4. Size:57K  chenmko
chdtc123tkgp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.5. Size:123K  chenmko
chdtc123ekgp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.6. Size:130K  chenmko
chdtc123eegp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.7. Size:86K  chenmko
chdtc123ykgp.pdf

CHDTC123JKGP
CHDTC123JKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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