Справочник транзисторов. CHDTC143EEGP

 

Биполярный транзистор CHDTC143EEGP - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CHDTC143EEGP
   Маркировка: 8J
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT-416

 Аналоги (замена) для CHDTC143EEGP

 

 

CHDTC143EEGP Datasheet (PDF)

 ..1. Size:88K  chenmko
chdtc143eegp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 5.1. Size:66K  chenmko
chdtc143ekgp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 5.2. Size:54K  chenmko
chdtc143eugp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 6.1. Size:172K  chenmko
chdtc143zugp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143ZUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.2. Size:158K  chenmko
chdtc143xegp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143XEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.3. Size:169K  chenmko
chdtc143xugp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143XUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.4. Size:75K  chenmko
chdtc143tkgp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.5. Size:97K  chenmko
chdtc143tegp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 6.6. Size:164K  chenmko
chdtc143zegp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143ZEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.7. Size:81K  chenmko
chdtc143tugp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.8. Size:154K  chenmko
chdtc143zkgp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143ZKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.9. Size:146K  chenmko
chdtc143xkgp.pdf

CHDTC143EEGP CHDTC143EEGP

CHENMKO ENTERPRISE CO.,LTDCHDTC143XKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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