Справочник транзисторов. DDA123JU

 

Биполярный транзистор DDA123JU - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DDA123JU
   Маркировка: P06
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT-363

 Аналоги (замена) для DDA123JU

 

 

DDA123JU Datasheet (PDF)

 ..1. Size:110K  diodes
dda123ju.pdf

DDA123JU
DDA123JU

DDA(xxxx)UPNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Types Available (DDC) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors Classification Rating 94V-0 Lead Free, RoHS Compliant (Note 1) Moisture Sensitiv

 7.1. Size:93K  diodes
dda124ek dda144ek dda114yk dda123jk dda114ek dda143tk dda114tk.pdf

DDA123JU
DDA123JU

DDA (xxxx) KPNP PRE-BIASED SMALL SIGNAL SOT-26DUAL SURFACE MOUNT TRANSISTORFeaturesA Epitaxial Planar Die Construction SOT-26 Complementary NPN Types Available (DDC)Dim Min Max Typ Built-In Biasing ResistorsA0.35 0.50 0.38B C Available in Lead Free/RoHS Compliant Version (Note 3)B1.50 1.70 1.60PXX YMC2.70 3.00 2.80GD0.95Mechanical DataHG1.90 Cas

 7.2. Size:203K  diodes
dda123jh.pdf

DDA123JU
DDA123JU

DDA (xxxx) H PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Complementary NPN Types Available (DDC) Dim Min Max Typ Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) A 0.15 0.30 0.25 BPXXYM C "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 Mechan

 9.1. Size:97K  diodes
dda11-xx-k dda12-xx-k dda14-xx-k-series.pdf

DDA123JU
DDA123JU

DDA (xxxx) KPNP PRE-BIASED SMALL SIGNAL SOT-26DUAL SURFACE MOUNT TRANSISTORFeaturesA Epitaxial Planar Die Construction SOT-26 Complementary NPN Types Available (DDC)Dim Min Max Typ Built-In Biasing ResistorsA0.35 0.50 0.38B C Available in Lead Free/RoHS Compliant Version (Note 3)B1.50 1.70 1.60PXX YMC2.70 3.00 2.80GD0.95Mechanical DataHG1.90 Cas

 9.2. Size:110K  diodes
dda124eu.pdf

DDA123JU
DDA123JU

DDA(xxxx)UPNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Types Available (DDC) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors Classification Rating 94V-0 Lead Free, RoHS Compliant (Note 1) Moisture Sensitiv

 9.3. Size:215K  diodes
dda122th.pdf

DDA123JU
DDA123JU

DDA (LO-R1) H PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Complementary NPN Types Available Dim Min Max Typ (DDC) Built-In Biasing Resistors A 0.15 0.30 0.25 BPXXYM C Lead Free By Design/RoHS Compliant (Note 3) B 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60 D 0.5

 9.4. Size:213K  diodes
dda12--u dda11--u dda14--u series.pdf

DDA123JU
DDA123JU

DDA (xxxx) UDDA (xxxx) U PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTORFeatures A Epitaxial Planar Die Construction SOT-363 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 3) A 0.10 0.30 "Green" Device (Note 4 and 5) B CB 1.15 1.35 PXX YMMechanical Data C 2.00 2.20 Case: SOT-363 D 0.65 Nominal Case Mat

 9.5. Size:237K  diodes
dda122tu.pdf

DDA123JU
DDA123JU

DDA (LO-R1) U PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary NPN Types Available (DDC) Dim Min Max Built-In Biasing Resistors Lead-Free/RoHS Compliant (Note 3) A 0.10 0.30 "Green" Device (Note 4 and 5) B CB 1.15 1.35 C 2.00 2.20 Mechanical Data D 0.65 Nominal Case

 9.6. Size:185K  diodes
dda12--u dda14--u.pdf

DDA123JU
DDA123JU

DDA (LO-R1) U PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary NPN Types Available (DDC) Dim Min Max Built-In Biasing Resistors Lead-Free/RoHS Compliant (Note 3) A 0.10 0.30 "Green" Device (Note 4 and 5) B CB 1.15 1.35 C 2.00 2.20 Mechanical Data D 0.65 Nominal Case

 9.7. Size:162K  diodes
dda12--h dda14--h-series.pdf

DDA123JU
DDA123JU

DDA (LO-R1) H PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Complementary NPN Types Available Dim Min Max Typ (DDC) Built-In Biasing Resistors A 0.15 0.30 0.25 BPXXYM C Lead Free By Design/RoHS Compliant (Note 3) B 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60 D 0.5

 9.8. Size:215K  diodes
dda122lh.pdf

DDA123JU
DDA123JU

DDA (LO-R1) H PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Complementary NPN Types Available Dim Min Max Typ (DDC) Built-In Biasing Resistors A 0.15 0.30 0.25 BPXXYM C Lead Free By Design/RoHS Compliant (Note 3) B 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60 D 0.5

 9.9. Size:237K  diodes
dda122lu.pdf

DDA123JU
DDA123JU

DDA (LO-R1) U PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary NPN Types Available (DDC) Dim Min Max Built-In Biasing Resistors Lead-Free/RoHS Compliant (Note 3) A 0.10 0.30 "Green" Device (Note 4 and 5) B CB 1.15 1.35 C 2.00 2.20 Mechanical Data D 0.65 Nominal Case

 9.10. Size:203K  diodes
dda124eh.pdf

DDA123JU
DDA123JU

DDA (xxxx) H PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Complementary NPN Types Available (DDC) Dim Min Max Typ Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) A 0.15 0.30 0.25 BPXXYM C "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 Mechan

 9.11. Size:174K  diodes
dda12--h dda11--h dda14--h series.pdf

DDA123JU
DDA123JU

DDA (xxxx) H PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Complementary NPN Types Available (DDC) Dim Min Max Typ Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) A 0.15 0.30 0.25 BPXXYM C "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 Mechan

 9.12. Size:272K  apt
aptgf75dda120t.pdf

DDA123JU
DDA123JU

APTGF75DDA120T Dual Boost Chopper VCES = 1200V IC = 75A @ Tc = 80C NPT IGBT Power Module Application AC and DC motor control Switched Mode Power Supplies Power factor correction Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low

 9.13. Size:286K  apt
aptgt50dda120t3.pdf

DDA123JU
DDA123JU

APTGT50DDA120T3 VCES = 1200V Dual Boost chopper IC = 50A @ Tc = 80C Trench IGBT Power Module Application 13 14 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 CR2Features Trench + Field Stop IGBT Technology 22 7- Low voltage drop - Low tail current 23 8- Switching frequency up to 20 kHz Q1 Q2- Soft reco

 9.14. Size:315K  apt
aptgf25dda120t3.pdf

DDA123JU
DDA123JU

APTGF25DDA120T3 Dual Boost Chopper VCES = 1200V IC = 25A @ Tc = 80C NPT IGBT Power Module Application 13 14 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 CR2Features Non Punch Through (NPT) Fast IGBT 22 7- Low voltage drop - Low tail current 23 8- Switching frequency up to 50 kHz Q1 Q2- Soft recovery paral

 9.15. Size:219K  microsemi
aptc90dda12ct1g.pdf

DDA123JU
DDA123JU

APTC90DDA12CT1G Dual boost chopper VDSS = 900V Super Junction MOSFET RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C SiC chopper diode Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged

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