Справочник транзисторов. DMC26105

 

Биполярный транзистор DMC26105 Даташит. Аналоги


   Наименование производителя: DMC26105
   Маркировка: K2
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: MINI5-G3-B
     - подбор биполярного транзистора по параметрам

 

DMC26105 Datasheet (PDF)

 ..1. Size:361K  panasonic
dmc26105.pdfpdf_icon

DMC26105

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26105Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

 7.1. Size:396K  fairchild semi
fdmc2610.pdfpdf_icon

DMC26105

January 2007FDMC2610tmN-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mFeatures General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5Aprocess. It has been optimized for power management Low Profile - 1mm max in a Pow

 7.2. Size:359K  panasonic
dmc26100.pdfpdf_icon

DMC26105

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26100Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

 7.3. Size:356K  panasonic
dmc26106.pdfpdf_icon

DMC26105

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26106Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RT1N430M | DTC115TM | KRC407V | DRC3A43X | BF393 | DTA024EEB | ZTX454

 

 
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