Биполярный транзистор DRA2523E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA2523E
Маркировка: SH
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: MINI3-G3-B
DRA2523E Datasheet (PDF)
dra2523e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2523ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2523E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea
dra2523y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2523YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2523Y Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea
dra2522j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2522JSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (st
dra2533q.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2533QSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count.Code Eco-friendly Halogen-free package Mini3-G3-BPin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (standa
dra2514e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2514ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2514E Features Package Contributes to miniaturization of sets, reduction of component count.Code Eco-friendly Halogen-free package Mini3-G3-BPin Name Packaging 1: BaseEmbossed type (Thermo-compression sealin
dra2543e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2543ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2543E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FJV1845
History: FJV1845
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050