Биполярный транзистор DRA2523Y - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA2523Y
Маркировка: SK
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.22
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: MINI3-G3-B
DRA2523Y Datasheet (PDF)
dra2523y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2523YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2523Y Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea
dra2523e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2523ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2523E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea
dra2522j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2522JSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (st
dra2533q.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2533QSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count.Code Eco-friendly Halogen-free package Mini3-G3-BPin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (standa
dra2514e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2514ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2514E Features Package Contributes to miniaturization of sets, reduction of component count.Code Eco-friendly Halogen-free package Mini3-G3-BPin Name Packaging 1: BaseEmbossed type (Thermo-compression sealin
dra2543e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2543ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2543E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050