Биполярный транзистор DRA3124E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA3124E
Маркировка: LE
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SSSMINI3-F2-B
DRA3124E Datasheet (PDF)
dra3124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3124EDRA9124E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
dra3124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3124XDRA9124X in SSSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reduction o
dra3124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3124TDRA9124T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
dra3123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3123JDRA9123J in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halo
dra3123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3123EDRA9123E in SSSMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SSSMini3-F2-B Pin Name Packaging 1: Base
dra3123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3123YDRA9123Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050