Биполярный транзистор DRA3A14E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA3A14E
Маркировка: GH
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.08 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 35
Корпус транзистора: SSSMINI3-F2-B
DRA3A14E Datasheet (PDF)
dra3a14e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A14ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A14EDRA9A14E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3a14y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A14YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A14YDRA9A14Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halo
dra3a14t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A14TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A14TDRA9A14T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
dra3a15e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A15ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A15EDRA9A15E in SSSMini3 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco
dra3a13z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A13ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A13ZDRA9A13Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
