Справочник транзисторов. DRA4124T

 

Биполярный транзистор DRA4124T - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DRA4124T
   Маркировка: LH
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: NS-B2-B-B

 Аналоги (замена) для DRA4124T

 

 

DRA4124T Datasheet (PDF)

 ..1. Size:221K  panasonic
dra4124t.pdf

DRA4124T
DRA4124T

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124TDRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 7.1. Size:348K  panasonic
dra4124e.pdf

DRA4124T
DRA4124T

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124EDRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 8.1. Size:223K  panasonic
dra4123y.pdf

DRA4124T
DRA4124T

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4123YDRA2123Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 8.2. Size:223K  panasonic
dra4123j.pdf

DRA4124T
DRA4124T

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4123JDRA2123J in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top