Биполярный транзистор DRA5123E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA5123E
Маркировка: L2
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 6
Корпус транзистора: SMINI3-F2-B
DRA5123E Datasheet (PDF)
dra5123e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123EDRA2123E in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmb
dra5123j.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123JDRA2123J in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-
dra5123y.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123YDRA2123Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5124e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124EDRA2124E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5124x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124XDRA2124X in SMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturization of sets, reduction of
dra5124t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124TDRA2124T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturization
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .