Биполярный транзистор DRA9115T - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA9115T
Маркировка: LT
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Максимальная рассеиваемая мощность (Pc): 0.125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SSMINI3-F3-B
DRA9115T Datasheet (PDF)
dra9115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115TDRA5115T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturiza
dra9115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115EDRA5115E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115GDRA5115G in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Haloge
dra9114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114TDRA5114T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturizati
dra9113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9113ZDRA5113Z in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114YDRA5114Y in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114EDRA5114E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
